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RF2152
2
Typical Applications * 3V CDMA/AMPS Cellular Handsets * 3V JCDMA/TACS Cellular Handsets * 3V TDMA/AMPS Cellular Handsets * Spread-Spectrum Systems * CDPD Portable Data Cards * Portable Battery-Powered Equipment
DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3V POWER AMPLIFIER
2
POWER AMPLIFIERS
D E RS F IG 21 62 N /R S
.157 .150 .012 .008 .003 .001
1
Product Description
The RF2152 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a PSSOP-16 with backside ground.
.197 .189
.025
.244 .228
8 MAX 0MIN
.030 .018
.009 .008
N E ro W d
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
uc ts
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
!
Package Style: PSSOP-16
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features * Single 3V Supply * 28dBm Linear Output Power * 30dB Linear Gain * 35% Linear Efficiency * On-board Power Down Mode * 800MHz to 960MHz Operation
VCC LTUNE
NC VCC1
N SO ee T
GND1
RF IN
VPD VPD
UF pg O ra R de d P
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
MODE NC
BIAS CIRCUITS
RF OUT RF OUT RF OUT NC NC NC
Ordering Information
Dual-Mode CDMA/AMPS or TDMA/AMPS 3V Power Amplifier RF2152 PCBA-N Fully Assembled Evaluation Board 824-849MHz RF2152 PCBA-J Fully Assembled Evaluation Board 877-924MHz RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com RF2152
PACKAGE BASE GND
Functional Block Diagram
Rev A8 001109
F2 19 2
.059 .051 .062 .070
EXPOSED HEATSINK
.102 .110
2-155
RF2152
Absolute Maximum Ratings Parameter
Supply Voltage (RF off) Supply Voltage (POUT 31dBm) DC Supply Current Mode Voltage (VMODE) Control Voltage (VPD) Input RF Power Operating Ambient Temperature Storage Temperature Moisture Sensitivity
Rating
+8.0 +5.2 1.0 +3.0 +3.0 +12 -40 to +85 -40 to +150 JEDEC LEVEL 5
Unit
VDC VDC A VDC VDC dBm C C
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Usable Frequency Range Typical Frequency Range Linear Gain Second Harmonic (including second harmonic trap) Max CW Output Power Total Efficiency (AMPS mode) Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Adjacent Channel Power Rejection Input VSWR Output Load VSWR Noise Figure Noise Power POUT =15dBm POUT =28dBm POUT =31dBm
Specification Min. Typ. Max.
800 824-849 877-925 30 -38 31.5 45 28.5 35 -46 -58
28 -32 31 40 28
N E ro W d
uc ts
30 -44 -56
< 2:1 6.0 86.5 89.3 92.3 3.4 90
UF pg O ra R de d P
5.9
Power Supply
N SO ee T
Power Supply Voltage Idle current Idle current
3.0
200 10
VPD current
Turn On/Off time Total Current (Power down) VPD "Low" Voltage VPD "High" Voltage MODE "High" Voltage MODE "Low" Voltage
2.7 2.1
0 2.8 2.8 0
2-156
D E RS F IG 21 62 N /R S
Unit
960 33 -42 32 55 29 MHz MHz MHz dB dBc dBm % dBm % dBc dBc Pout=28dBm Tuned for CDMA Tuned for CDMA 38 -50 -62 ACPR@885kHz ACPR@1980kHz 10:1 6.1 dB dBm dBm dBm V mA mA mA <100 10 0.2 2.9 2.9 0.5 ns A V V 5.2 VPD = low
Condition
T=25C, VCC =3.4V, VPD =2.8V, Freq=824MHz to 849MHz, unless otherwise specified
No oscillations VCC =3.4V VCC =3.4V; 30KHz BW; RX Band NP measured from TX center band to RX center band
MODE = low Pin 16=Ground AMPS/Low Power CDMA Modes MODE = high Pin 16=2.8V High Power CDMA Mode (Pout>20dBm) Pins7,8, Vpd=2.8V (Pin 7 typ. not connected, I=5mA for Pin 8)
F2 19 2
Rev A8 001109
RF2152
Pin 1 2 Function VCC LTUNE Description
Power supply for input bias circuitry. A 100 pF high frequency bypass capacitor is recommended. Interstage tuning. This pin will connect to a shunt inductor used for interstage tuning. For 824MHz to 849MHz a 1.5nH discrete inductor is used; for 877MHz to 925MHz a shorted transmission line presenting 0.7 nH of inductance or discrete inductor may be used. This inductor should be placed as close to the pin as possible. No connection. Grounding pin is recommended. Power supply for stage 1. VCC should be fed through a 25nH or greater inductor with a decoupling capacitor on the VCC side. Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. This ground should be isolated from the backside ground contact. RF input. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. See pin 6. See pin 6.
Interface Schematic
5 6
GND1 RF IN
D E RS F IG 21 62 N /R S
7
VPD
No connection. Grounding pin is recommended. No connection. Grounding pin is recommended.
RF output and power supply for the output stage. The bias for the output stage is provided through this pin and pin 13. An external matching network is required to provide the optimum load impedance; see the application schematics for details. The first shunt cap of the matching circuit should be placed as close to the pin as possible. Same as pin 12.
N E ro W d
uc ts
8 9 10 11 12
VPD NC NC NC RF OUT
Power Down control. When this pin is "low", all circuits are shut off. When this pin is 2.8 volts, all circuits are operating normally. VPD requires a regulated 2.8 V for the amplifier to operate properly over all specified temperature and voltage ranges. A dropping resistor from a higher regulated voltage may be used to provide the required 2.8 V. A 100 pF high frequency bypass capacitor is recommended. Connect to pin 7. No connection. Grounding pin is recommended.
13 14
RF OUT RF OUT
UF pg O ra R de d P
See pin 12. See pin 12.
Harmonic trap. This pin connects to the RF output but is used for providing a low impedance to the second harmonic of the operating frequency. An inductor or transmission line resonating with a shunt capacitor at 2f0 is connected to this pin. No connection. Grounding pin is recommended. The mode pin allows higher efficiency operation in AMPS and low power CDMA modes. MODE should be set "low" for highest efficiency in AMPS/TACS and in low power (<+15 dBm) CDMA operation. MODE should be set "high" for best linearity in high power CDMA operation.
N SO ee T
15 16
NC MODE
Pkg Base
GND
Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane.
Rev A8 001109
F2 19 2
VCC1 RF IN From Bias GND1 Stages RF OUT From Bias Stages
MODE
2-157
POWER AMPLIFIERS
3 4
NC VCC1
2
RF2152
Application Schematic 824MHz to 849MHz
VCC 100 pF
100 pF 20 nH
2
POWER AMPLIFIERS
100 pF 1 100 pF 1.2 nH 2 3 47 nH 4 5 100 pF RF IN 6 7 8 R3 VPD 100 pF BIAS CIRCUITS 16 15 14 13 12 11 10 9
D E RS F IG 21 62 N /R S
2 pF 1 nH 2.7 nH 9 pF 7 pF
N SO ee T
2-158
UF pg O ra R de d P
N E ro W d
PACKAGE BASE
uc ts
*L6 may be implemented as a transmission line to reduce DC losses. *R3 is used for bias adjustment. 0 for 2.8 V regulated supply. *All unused pins should be grounded to PC board if possible.
F2 19 2
MODE 100 pF RF OUT
Rev A8 001109
RF2152
Application Schematic 877MHz to 924MHz
VCC 100 pF
100 pF 20 nH
2
POWER AMPLIFIERS
100 pF 1 100 pF 0.7 nH 2 3 47 nH 4 5 100 pF RF IN R3 VPD 100 pF 7 8 6 16 15 14 13 12 11 10 9
D E RS F IG 21 62 N /R S
BIAS CIRCUITS 2 pF 1 nH 2.2 nH 8 pF PACKAGE BASE
N SO ee T
Rev A8 001109
UF pg O ra R de d P
N E ro W d
uc ts
*L6 may be implemented as a transmission line to reduce DC losses. *R3 is used for bias adjustment. 0 for 2.8 V regulated supply. *All unused pins should be grounded to PC board if possible.
F2 19 2
MODE 100 pF RF OUT 6 pF
2-159
RF2152
Evaluation Board Schematic 824MHz to 849MHz
(Download Bill of Materials from www.rfmd.com.)
VCC
2
POWER AMPLIFIERS
C1 3.3 F
C4 100 pF
20 nH
2152400A
C15 100 pF 16 15 14 13 12 11 10 9
C14 3.3 F R2 0
D E RS F IG 21 62 N /R S
BIAS CIRCUITS C12 1 pF 1 nH 425 mil 50 C9 9 pF C10 7 pF PACKAGE BASE
1 C3 100 pF C2 100 pF L1 47 nH L2 1.2 nH 2 3 4 5 RF IN 6 C6 100 pF 7 8 R4 OPEN VPD C8 100 pF C7 3.3 F R3 0
50
*The position of C10 can be used to trade-off efficiency and linearity. *R3 and R4 may be used for bias adjustment.
N E ro W d
uc ts
P1 P1-1 1 2 P1-3 3 VCC GND PD
(PCB mat'l: FR-4; Four Layer: 31 mil; 9 mil core)
N SO ee T
2-160
UF pg O ra R de d P
F2 19 2
MODE C13 1 pF RF OUT C11 100 pF
Rev A8 001109
RF2152
Evaluation Board Schematic 877MHz to 924MHz
VCC C1 3.3 F C4 100 pF
20 nH
2
POWER AMPLIFIERS
2 0.7 nH L1 47 nH C2 100 pF RF IN VPD C8 100 pF C7 3.3 F 3 4 C6 100 pF 50 5 6 R4 OPEN R3 0 7 8
D E RS F IG 21 62 N /R S
BIAS CIRCUITS 15 14 13 12 11 10 9 R2 0 1 nH 375 mil 50 C9 8 pF C10 6 pF
1
16
*The position of C10 can be used to trade-off efficiency and linearity. *R3 and R4 may be used for bias adjustment.
N E ro W d
uc ts
PACKAGE BASE
P1 P1-1 1 2 P1-3 3 VCC GND PD
(PCB mat'l: FR-4; Four Layer: 31 mil; 9 mil core)
N SO ee T
Rev A8 001109
UF pg O ra R de d P
F2 19 2
MODE C12 1 pF C13 1 pF RF OUT C11 100 pF
C3 100 pF
2152401-
C15 100 pF
C14 3.3 F
2-161
RF2152
Evaluation Board Layout 824MHz to 849MHz 1" x 1"
Board Thickness 0.034", Board Material FR-4, Multi-Layer
2
POWER AMPLIFIERS
N SO ee T
2-162
UF pg O ra R de d P
N E ro W d
uc ts
D E RS F IG 21 62 N /R S
F2 19 2
Rev A8 001109
RF2152
Evaluation Board Layout 877MHz to 924MHz 1" x 1"
2
N SO ee T
Rev A8 001109
UF pg O ra R de d P
N E ro W d
uc ts
D E RS F IG 21 62 N /R S
F2 19 2
2-163
POWER AMPLIFIERS
RF2152
-40.0 -41.0 -42.0 -43.0
ACPR (@885 kHz offset) versus Frequency VCC = 3.5 V, VREG = 2.8 V, CDMA POUT = 28 dBm
Lower -30 C Upper -30 C Lower + 25 C Upper +25 C Lower +85 C
-52.0
ACPR (@1980 kHz offset) versus Frequency VCC = 3.5 V, VREG = 2.8 V, CDMA POUT = 28 dBm
Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C
-54.0
-56.0
ACPR (dBc)
POWER AMPLIFIERS
-45.0 -46.0 -47.0 -48.0 -49.0 -50.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0
ACPR (dBc)
2
-44.0
-58.0
-60.0
-62.0
855.0
D E RS F IG 21 62 N /R S
-64.0 -66.0 -68.0 820.0 825.0 830.0 835.0 840.0
Frequency (MHz)
Frequency (MHz)
34.0
Gain versus Frequency VCC = 3.5 V, VREG = 2.8 V, CDMA POUT = 28 dBm
-30 C +25 C +85 C
40.0 39.0 38.0 37.0 36.0 35.0 34.0 33.0 32.0 31.0 30.0
PAE versus Frequency VCC = 3.5 V, VPD = 2.8 V, CDMA POUT = 28 dBm
-30 C +25 C +85 C
33.5
33.0
32.0
31.5
31.0
30.5
30.0 820.0
UF pg O ra R de d P
N E ro W d
32.5
uc ts
Gain (dB)
PAE (%)
825.0
830.0
835.0
840.0
845.0
850.0
855.0
820.0
825.0
830.0
835.0
840.0
Frequency (MHz)
Frequency (MHz)
-40.0
ACPR (@885 kHz offset) versus Frequency VCC = 3.0 V, VREG = 2.8 V, CDMA POUT = 27 dBm
-54.0
ACPR (@1908 kHz offset) versus Frequency VCC = 3.0 V, VREG = 2.8 V, CDMA POUT = 27 dBm
Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C
N SO ee T
-41.0
Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C
-56.0
-42.0
-58.0
ACPR (dBc)
ACPR (dBc)
-43.0
-44.0
-60.0
-45.0
-62.0
-46.0 -64.0 -47.0
-48.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0
-66.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0
Frequency (MHz)
Frequency (MHz)
2-164
F2 19 2
845.0 850.0 855.0 845.0 850.0 855.0
Rev A8 001109
RF2152
34.0
Gain versus Frequency VCC = 3.0 V, VREG = 2.8 V, CDMA POUT = 27 dBm
-30 C +25 C +85 C
42.0 41.0 40.0 39.0
PAE versus Frequency VCC = 3.0 V, VREG = 2.8 V, CDMA POUT = 27 dBm
-30 C +25 C +85 C
33.5
33.0
32.5
Gain (dB)
38.0
2
PAE (%)
32.0
37.0 36.0 35.0 34.0 33.0 32.0
31.5
31.0
30.5
30.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0
855.0
D E RS F IG 21 62 N /R S
820.0
825.0
830.0
835.0
840.0
Frequency (MHz)
Frequency (MHz)
-44.0
ACPR (@885 kHz offset) versus Frequency VCC = 5.0 V, VREG = 2.8 V, CDMA POUT = 28 dBm
-52.0
ACPR (@1908 kHz offset) versus Frequency VCC = 5.0 V, VREG = 2.8 V, CDMA POUT = 28 dBm
Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C
-45.0
Lower -30 C Upper -30 C Lower +25 C Upper +25 C Lower +85 C
-53.0
-46.0
-54.0
N E ro W d
ACPR (dBc)
-48.0
-49.0
-50.0
-51.0
-52.0 820.0
UF pg O ra R de d P
825.0
830.0
835.0
840.0
845.0
850.0
855.0
uc ts
ACPR (dBc)
-47.0
-55.0
-56.0
-57.0
-58.0
-59.0
-60.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0
Frequency (MHz)
Frequency (MHz)
33.0
Gain versus Frequency VCC = 5.0 V, VREG = 2.8 V, CDMA POUT = 28 dBm
30.0 29.0 28.0 27.0 26.0
PAE versus Frequency VCC = 5.0 V, VREG = 2.8V, CDMA POUT = 27 dBm
-30 C +25 C +85 C
-30 C +25 C +85 C
N SO ee T
32.5
32.0
31.5
Gain (dB)
PAE (%)
31.0
25.0 24.0 23.0 22.0
30.5
30.0
29.5
21.0 20.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0 855.0
29.0 820.0
Frequency (MHz)
Frequency (MHz)
Rev A8 001109
F2 19 2
845.0 850.0 855.0
2-165
POWER AMPLIFIERS
RF2152
65.0 60.0 50.0 55.0 45.0
AMPS Mode VCC = 3.0 V, VREG = 2.8 V, POUT = 30.5 dBm
55.0
AMPS Mode VCC = 3.5 V, VREG = 2.8 V, POUT = 31.5 dBm
Gain (dB)/PAE (%)
Gain (dB)/PAE (%)
2
POWER AMPLIFIERS
50.0 45.0 40.0 35.0 30.0 25.0 20.0 820.0 825.0 830.0 835.0 840.0 845.0 850.0 T=-30 PAE T=25 PAE T=85 PAE T=-30 Gain T=25 Gain
40.0
855.0
D E RS F IG 21 62 N /R S
25.0 20.0 820.0 825.0 830.0 835.0 840.0
30.0
Frequency (MHz)
Frequency (MHz)
40.0
AMPS Mode VCC = 5.0 V, VREG = 2.8 V, POUT = 31.5 dBm
T=85 PAE T=25 PAE T=-30 PAE T=-30 Gain T=25 Gain
32.4 32.2 32.0 31.8 31.6 31.4 31.2 31.0 30.8 30.6 30.4
Gain/PAE versus POUT VCC = 3.5 V, VREG = 2.8 V, Freq = 836 MHz
GAIN PAE
38.0
36.0
Gain (dB)/PAE (%)
N E ro W d
uc ts
Gain (dB)
34.0
25.0 20.0 15.0 10.0 5.0 0.0
32.0
30.0
28.0
26.0 820.0
UF pg O ra R de d P
825.0
830.0
835.0
840.0
845.0
850.0
855.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Frequency (MHz)
POUT (dBm)
N SO ee T
2-166
Rev A8 001109
PAE (%)
F2 19 2
845.0 850.0 855.0 50.0 45.0 40.0 35.0 30.0
35.0
T=25 PAE T=85 PAE T=-30 PAE T=-30 Gain T=25 Gain

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